HiSIM-SOI: SOI-MOSFET Model for Circuit Simulation Valid also for Device Optimization
نویسندگان
چکیده
Circuit simulation model for advanced SOI-MOSFETs has been developed by solving Poisson’s equation consistently. It is successfully proven that, as a result of solving the Poisson’s equation considering its device structure, our model is applicable for various variations of SOI-MOSFETs such as partially depleted (PD), fully depleted (FD) and dynamically depleted SOI-MOSFETs, which is the indispensible feature as a compact model to be applied for device optimization. Floating body effect is also reproduced by considering the accumulated holes within SOI body region, which is included in the Poisson’s equation, confirming the advantages of the potential based modeling.
منابع مشابه
The Surface-Potential-Based model HiSIM-SOI and its Application to 1/f Noise in Fully-Depleted SOI-MOSFETs
The fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is the first model for circuit simulation based on a complete surface-potential description. HiSIM-SOI solves the surface potentials at all three SOI-surfaces perpendicular to the channel surface self-consistently. Besides verification against measured I-V characteristics, HiSIM-SOI is also verified with a 1/f noise analysis, ...
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